Recent advances in producing two-dimensional (2D) materials such as Graphene, Silicene and Phosphorene support the concept of an allotropic form of Arsenic being achievable as a layer of Arsenene-on-Silicon (AeOS). The technical community recently published metrological and computational evidence of Arsenene as a potential heterostructure that complements crystalline lattices of a range of semiconductor substrate materials. Until now, a stable process that yields high-quality interfaces between Silicon and a 2D layer of Arsenene has not been demonstrated.


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